The reference design combines 650V GaN FETs, a 200 MHz digital controller and hardware security for high-density rack power conversion. The reference design uses Microchip’s dsPIC33AK digital signal ...
The platform standardizes grid interaction, system integration, installation, and maintenance in large-scale electrolysis ...
The facility will combine diamond synthesis, surface preparation, metrology and process integration for semiconductor ...
The driver uses 15 A three-phase variable-current control to reduce switching losses and support configurable SiC and IGBT designs. Skyworks Solutions has completed AEC-Q100 automotive qualification ...
In this Power Corner interview, Thomas Rodgers, Head of Business Sector Electronics of Zeiss Microscopy, discusses failure ...
IEEE LI’s free Power Electronics Symposium returns Nov. 5 in Hauppauge, NY, with technical talks, an exhibit floor, and networking meals. Long Island’s power electronics community will gather on ...
The dual SiC MOSFET module combines an 800 A drain-current rating with a 300 kA²s diode I²t rating for demanding power ...
The axial-leaded devices combine 6, 8 and 10 kA surge ratings with stable clamping and MIL-STD-750 screening for demanding ...
The four devices combine 0.2 mA typical channel current with 25 Mbps data rates, 30 kV/μs CMTI and 3,000 Vrms isolation.
Virtual synchronous machines make inverters emulate synchronous generators; SYNDEM architecture scales this approach to 108 ...
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